2sa2013 / 2sc5566 no.6307-1/8 applicaitons ? relay drivers, lamp drivers, motor drivers, ash features ? adoption of fbet and mbit processes ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? ultrasmall package facilitales miniaturization in end products ? high allowable power dissipation ( )2sa2013 speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (-50)100 v collector-to-emitter voltage v ces (-50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : EN6307C 72512 tkim/62405ea msim tb-00001405/52501 ts kt ta-3260 sanyo semiconductors data sheet 2sa2013/2sc5566 pnp / npn epitaxial planar silicon transistors dc / dc converter applications http:// semicon.sanyo.com/en/network product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa2013-td-e 2sc5566-td-e at lot no. fc lot no. 2sc5566 2sa2013 2 3 1 2sc5566 2 3 1 2sa2013
2sa2013 / 2sc5566 no.6307-2/8 continued from preceding page. parameter symbol conditions ratings unit collector current i c (--)4 a collector current (pulse) i cp (--)7 a base current i b (--)600 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w tc=25c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe v ce =(--)2v, i c =(--)500ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (360)400 mhz output capacitance cob v cb =(--)10v, f=1mhz (24)15 pf collector-to-emitter saturation voltage v ce (sat)1 i c =(--)1a, i b =(--)50ma (--105)85 (--180)130 mv v ce (sat)2 i c =(--)2a, i b =(--)100ma (--200)150 (--340)225 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma (--)0.89 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)100 v collector-to-emitter breakdown voltage v (br)ces i c =(--)100 a, r be =0 (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (30)35 ns storage time t stg (230)300 ns fall time t f (15)20 ns switching time test circuit ordering information device package shipping memo 2sa2013-td-e pcp 1,000pcs./reel pb free 2sc5566-td-e pcp 1,000pcs./reel v r 10 r b v cc =25v v be = --5v + + 50 input outpu t r l 25 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a for pnp, the polarit y is reversed.
2sa2013 / 2sc5566 no.6307-3/8 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 4 3 2 1 0.4 0.8 1.2 1.6 2.0 0 0 i b =0ma 10ma 20ma 30ma 40ma 50ma 100ma 60ma 70ma 80ma 90ma it00153 -- 4 -- 3 -- 2 -- 1 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 --10ma --20ma --60ma --50ma --80ma --90ma --100ma i b =0ma it00152 --30ma --40ma --70ma 2sa2013 2sc5566 h fe -- i c h fe -- i c dc current gain, h fe collector current, i c -- a collector current, i c -- a dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2sc5566 v ce =2v ta=75 c 25 c --25 c it00155 ta=75 c 25 c --25 c 2sa2013 v ce = --2v --4.0 --3.5 --3.0 --2.5 --2.0 --1.0 --0.5 --1.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.0 --1.2 it00154 1000 100 2 3 5 7 2 3 5 7 10 2 3 5 7 1.0 0.01 0.1 23 57 23 57 23 57 1.0 10 ta=75 c -- 2 5 c it00160 2sc5566 i c / i b =20 --1000 --100 2 3 5 7 2 3 5 7 --10 2 3 5 7 --1.0 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 ta=75 c --25 c it00158 2sa2013 i c / i b =20 ta=75 c 25 c --25 c 1000 100 7 5 3 2 7 5 3 2 10 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 2sa2013 v ce = --2v it00156 1000 100 7 5 3 2 7 5 3 2 10 0.01 3 25 10 0.1 73 257 3 257 1.0 ta=75 c --25 c 25 c 2sc5566 v ce =2v it00157 25 c 25 c
2sa2013 / 2sc5566 no.6307-4/8 v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a 0.01 0.1 23 57 23 57 23 57 1.0 10 10000 1000 7 5 3 2 7 5 3 2 7 5 3 2 100 10 it00161 ta=75 c -- 2 5 c 2sc5566 i c / i b =50 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 --10000 7 5 3 2 7 5 3 2 --1000 7 5 3 2 --100 --10 it00159 ta=75 c ta=75 c 25 c 25 c --25 c --25 c 2sa2013 i c / i b =50 25 c 25 c ta=75 c -- 2 5 c v be (sat) -- i c v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v cob -- v cb f t -- i c f t -- i c cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf gain-bandwidth product, f t -- mhz collector current, i c -- a collector current, i c -- a gain-bandwidth product, f t -- mhz 10 1.0 0.1 0.01 0.1 1.0 10 ta= --25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sc5566 i c / i b =50 it00163 --10 --1.0 --0.1 --0.01 --0.1 --1.0 --10 ta= --25 c 25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sa2013 i c / i b =50 it00162 25 c 7 3 100 10 2 5 1000 7 5 3 2 --0.01 257 7 7 3 --0.1 25 325 3 --1.0 --10 57 it00166 2sa2013 v ce = --10v 7 3 100 10 2 5 1000 7 5 3 2 0.01 257 7 7 3 0.1 25 325 3 1.0 10 5 it00167 2sc5566 v ce =10v 5 3 2 7 5 3 2 7 5 3 2 100 10 0.1 23 3 7737 75 5 1.0 2 10 2 5 100 5 it00165 2sc5566 f=1mhz 5 3 2 7 5 3 2 2 7 5 3 100 10 --0.1 23 7 5 7 5237 5237 5 --1.0 --10 --100 it00164 2sa2013 f=1mhz
2sa2013 / 2sc5566 no.6307-5/8 10 1.0 0.01 2 7 5 3 2 7 5 3 2 0.1 7 5 3 2 1.0 0.1 10 100 25 37 25 37 25 37 i cp =7a 100ms 10ms 1ms 100 s 500 s i c =4a dc oper a tion it00168 0 2.0 1.5 1.3 1.0 0.5 20 060 40 80 100 140 120 160 it00169 2sa2013 / 2sc5566 a s o p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c collector-to-emitter voltage, v ce -- v collector current, i c -- a 2sa2013 / 2sc5566 tc=25 c single pulse for pnp, the minus sign is omitted. mounted on a ceramic board (250mm 2 ? 0.8mm) p c -- tc case temperature, tc -- c collector dissipation, p c -- w p c -- tc 4.0 0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 20 060 40 80 100 140 120 160 it01533 2sa2013 / 2sc5566
2sa2013 / 2sc5566 no.6307-6/8 bag packing speci cation 2sa2013-td-e, 2sc5566-td-e
2sa2013 / 2sc5566 no.6307-7/8 outline drawing land pattern example 2sa2013-td-e, 2sc5566-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sa2013 / 2sc5566 ps no.6307-8/8 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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